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使用无掩膜制造技术的用于神经植入物的高密度电馈通的低温方法。

Low temperature approach for high density electrical feedthroughs for neural implants using maskless fabrication techniques.

作者信息

Langenmair M, Martens J, Gierthmuehlen M, Plachta D T T, Stieglitz T

出版信息

Annu Int Conf IEEE Eng Med Biol Soc. 2018 Jul;2018:2933-2936. doi: 10.1109/EMBC.2018.8512922.

Abstract

Implantable electronic packages for neural implants utilize reliable electrical feedthroughs that connect the inside of a sealed capsule to the components that are exposed to the surrounding body tissue. With the ongoing miniaturization of implants requiring ever higher integration densities of such feedthroughs new technologies have to be investigated. The presented work investigates the sealing of vertical feedthroughs in aluminum-oxide-substrates with gold stud-bumps. The technology enables integration densities of up to 1600/cm while delivering suitable water leak rates for realistic implantation durations of miniaturized packages (feedthrough-count $>50$, package-volume $<2$ cm $^{3})$ of more than 50 years. All manufacturing steps require temperatures below $420 ^{\circ}\mathrm {C}$ and are suitable for maskless rapid prototyping.

摘要

用于神经植入物的可植入电子封装采用可靠的电馈通结构,将密封胶囊内部与暴露于周围身体组织的部件连接起来。随着植入物不断小型化,对这种馈通结构的集成密度要求越来越高,因此必须研究新技术。本文的工作研究了用金柱形凸块密封氧化铝基板中的垂直馈通结构。该技术能够实现高达1600/cm的集成密度,同时为小型封装(馈通数量>50,封装体积<2 cm³)超过50年的实际植入持续时间提供合适的水泄漏率。所有制造步骤所需温度均低于420℃,适用于无掩膜快速原型制作。

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