Physics Department, Technical University of Munich, 85748 Garching, Germany.
Nanoscale. 2018 Nov 29;10(46):21971-21977. doi: 10.1039/c8nr06387g.
By combining X-ray photoelectron spectroscopy, X-ray standing waves and scanning tunneling microscopy, we investigate the geometric and electronic structure of a prototypical organic/insulator/metal interface, namely cobalt porphine on monolayer hexagonal boron nitride (h-BN) on Cu(111). Specifically, we determine the adsorption height of the organic molecule and show that the original planar molecular conformation is preserved in contrast to the adsorption on Cu(111). In addition, we highlight the electronic decoupling provided by the h-BN spacer layer and find that the h-BN-metal separation is not significantly modified by the molecular adsorption. Finally, we find indication of a temperature dependence of the adsorption height, which might be a signature of strongly-anisotropic thermal vibrations of the weakly bonded molecules.
通过结合 X 射线光电子能谱、X 射线驻波和扫描隧道显微镜，我们研究了典型的有机/绝缘体/金属界面的几何和电子结构，即钴卟啉在单层六方氮化硼（h-BN）上的铜（111）。具体来说，我们确定了有机分子的吸附高度，并表明与在 Cu(111)上的吸附相比，原始的平面分子构象得以保留。此外，我们强调了 h-BN 间隔层提供的电子去耦，并发现 h-BN-金属的分离并没有被分子吸附显著改变。最后，我们发现吸附高度对温度有依赖性的迹象，这可能是弱键合分子强烈各向异性热振动的特征。
