Chew Ming Tsuey, Nisbet Andrew, Suzuki Masao, Matsufuji Naruhiro, Murakami Takeshi, Jones Bleddyn, Bradley David A
Sunway University, Centre for Biomedical Physics, School of Healthcare and Medical Sciences, No 5, Jalan Universiti, Bandar Sunway, Selangor Darul Ehsan, Malaysia.
Department of Physics, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, UK.
J Radiat Res. 2019 Jan 1;60(1):59-68. doi: 10.1093/jrr/rry081.
Glioblastoma (GBM), a Grade IV brain tumour, is a well-known radioresistant cancer. To investigate one of the causes of radioresistance, we studied the capacity for potential lethal damage repair (PLDR) of three altered strains of GBM: T98G, U87 and LN18, irradiated with various ions and various levels of linear energy transfer (LET). The GBM cells were exposed to 12C and 28Si ion beams with LETs of 55, 100 and 200 keV/μm, and with X-ray beams of 1.7 keV/μm. Mono-energetic 12C ions and 28Si ions were generated by the Heavy Ion Medical Accelerator at the National Institute of Radiological Science, Chiba, Japan. Clonogenic assays were used to determine cell inactivation. The ability of the cells to repair potential lethal damage was demonstrated by allowing one identical set of irradiated cells to repair for 24 h before subplating. The results show there is definite PLDR with X-rays, some evidence of PLDR at 55 keV/μm, and minimal PLDR at 100 keV/μm. There is no observable PLDR at 200 keV/μm. This is the first study, to the authors' knowledge, demonstrating the capability of GBM cells to repair potential lethal damage following charged ion irradiations. It is concluded that a GBM's PLDR is dependent on LET, dose and GBM strain; and the more radioresistant the cell strain, the greater the PLDR.
胶质母细胞瘤(GBM)是一种IV级脑肿瘤,是一种众所周知的放射抗性癌症。为了研究放射抗性的原因之一,我们研究了三种GBM变异株:T98G、U87和LN18在受到各种离子和不同线性能量传递(LET)水平照射后的潜在致死性损伤修复(PLDR)能力。将GBM细胞暴露于LET分别为55、100和200 keV/μm的12C和28Si离子束以及1.7 keV/μm的X射线束下。单能12C离子和28Si离子由日本千叶国立放射科学研究所的重离子医学加速器产生。采用克隆形成试验来确定细胞失活情况。通过让一组相同的受照射细胞在传代培养前修复24小时,证明了细胞修复潜在致死性损伤的能力。结果表明,X射线存在明确的PLDR,55 keV/μm时有一些PLDR的证据,100 keV/μm时PLDR最小。在200 keV/μm时没有观察到PLDR。据作者所知,这是第一项证明GBM细胞在带电离子照射后具有修复潜在致死性损伤能力的研究。得出的结论是,GBM的PLDR取决于LET、剂量和GBM菌株;细胞株的放射抗性越强,PLDR越大。