Pan Kefeng, Li Ying, Zhang Jiawei, Zhao Qing
School of Metallurgy, Northeastern University, Shenyang 110819, China.
Liaoning Key Laboratory for Metallurgical Sensors and Technology, Shenyang 110819, China.
Materials (Basel). 2018 Nov 17;11(11):2308. doi: 10.3390/ma11112308.
As one of the critical raw materials, very pure gallium is important for the semiconductor and photoelectric industry. Unfortunately, refining gallium to obtain a purity that exceeds 99.99999% is very difficult. In this paper, a new, facile and efficient continuous partial recrystallization method to prepare gallium of high purity is investigated. Impurity concentrations, segregation coefficients, and the purification effect were measured. The results indicated that the contaminating elements accumulated in the liquid phase along the crystal direction. The order of the removal ratio was Cu > Mg > Pb > Cr > Zn > Fe. This corresponded to the order of the experimentally obtained segregation coefficients for each impurity: Cu < Mg < Pb < Cr < Zn < Fe. The segregation coefficient of the impurities depended strongly on the crystallization rate. All observed impurity concentrations were substantially reduced, and the purity of the gallium obtained after our refinement exceeded 99.99999%.
作为关键原材料之一，超纯镓对半导体和光电产业至关重要。遗憾的是，将镓提纯至超过99.99999%的纯度非常困难。本文研究了一种新型、简便且高效的连续部分重结晶法来制备高纯度镓。测量了杂质浓度、偏析系数和提纯效果。结果表明，污染元素沿晶体方向在液相中累积。去除率顺序为Cu＞Mg＞Pb＞Cr＞Zn＞Fe。这与实验得到的各杂质偏析系数顺序一致：Cu＜Mg＜Pb＜Cr＜Zn＜Fe。杂质的偏析系数强烈依赖于结晶速率。所有观察到的杂质浓度均大幅降低，我们提纯后得到的镓纯度超过了99.99999%。
