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微电子互连中的镓基合金:综述

Ga-Based Alloys in Microelectronic Interconnects: A Review.

作者信息

Liu Shiqian, Sweatman Keith, McDonald Stuart, Nogita Kazuhiro

机构信息

Nihon Superior Centre for the Manufacture of Electronic Materials (NS CMEM), School of Mechanical and Mining Engineering, The University of Queensland, Brisbane 4072, QLD, Australia.

Nihon Superior Co., Ltd, Suita City, Osaka 564-0063, Japan.

出版信息

Materials (Basel). 2018 Aug 8;11(8):1384. doi: 10.3390/ma11081384.

DOI:10.3390/ma11081384
PMID:30096828
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6119961/
Abstract

Gallium (Ga) and some of its alloys have a range of properties that make them an attractive option for microelectronic interconnects, including low melting point, non-toxicity, and the ability to wet without fluxing most materials-including oxides-found in microelectronics. Some of these properties result from their ability to form stable high melting temperature solid solutions and intermetallic compounds with other metals, such as copper, nickel, and aluminium. Ga and Ga-based alloys have already received significant attention in the scientific literature given their potential for use in the liquid state. Their potential for enabling the miniaturisation and deformability of microelectronic devices has also been demonstrated. The low process temperatures, made possible by their low melting points, produce significant energy savings. However, there are still some issues that need to be addressed before their potential can be fully realised. Characterising Ga and Ga-based alloys, and their reactions with materials commonly used in the microelectronic industry, are thus a priority for the electronics industry. This review provides a summary of research related to the applications and characterisation of Ga-based alloys. If the potential of Ga-based alloys for low temperature bonding in microelectronics manufacturing is to be realised, more work needs to be done on their interactions with the wide range of substrate materials now being used in electronic circuitry.

摘要

镓(Ga)及其一些合金具有一系列特性,使其成为微电子互连的一个有吸引力的选择,这些特性包括低熔点、无毒,以及能够在不使用助熔剂的情况下与微电子中发现的大多数材料(包括氧化物)良好润湿。其中一些特性源于它们与其他金属(如铜、镍和铝)形成稳定的高熔点固溶体和金属间化合物的能力。鉴于镓及其基合金在液态下的应用潜力,它们在科学文献中已受到广泛关注。它们在实现微电子器件小型化和可变形性方面的潜力也已得到证实。由于其低熔点而使得工艺温度较低,这显著节省了能源。然而,在其潜力得到充分发挥之前,仍有一些问题需要解决。因此,对镓及其基合金进行表征,以及研究它们与微电子行业常用材料的反应,是电子行业的一个优先事项。本综述总结了与镓基合金的应用和表征相关的研究。如果要实现镓基合金在微电子制造中低温键合的潜力,就需要在它们与目前电子电路中广泛使用的各种衬底材料的相互作用方面开展更多工作。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7fd8/6119961/67e08ae1344c/materials-11-01384-g010.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7fd8/6119961/08a721eb9d1c/materials-11-01384-g008.jpg
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