作者更正：用于基于二维材料异质结构的三维集成系统的原子精确石墨烯蚀刻终止层
Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures.
作者信息
Son Jangyup, Kwon Junyoung, Kim SunPhil, Lv Yinchuan, Yu Jaehyung, Lee Jong-Young, Ryu Huije, Watanabe Kenji, Taniguchi Takashi, Garrido-Menacho Rita, Mason Nadya, Ertekin Elif, Huang Pinshane Y, Lee Gwan-Hyoung, van der Zande Arend M
机构信息
Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 W Green Street, Urbana, IL, 61801, USA.
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Korea.
出版信息
Nat Commun. 2018 Nov 20;9(1):4965. doi: 10.1038/s41467-018-07297-5.
The original version of this Article contained an error in the second sentence of the second paragraph of the 'Electrical properties of fluorinated graphene contacts' section of the Results, which incorrectly read 'The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the carrier mobility, carrier density, electron charge, and sheet conductivity, respectively'. The correct version states 'μ = σ/ne ' in place of 'μ = ne/σ '. This has been corrected in both the PDF and HTML versions of the Article.
本文的原始版本在结果部分“氟化石墨烯接触的电学性质”一节第二段的第二句中存在一处错误，原句错误地表述为“迁移率由德鲁德模型计算得出，μ = ne/σ，其中μ、n、e和σ分别为载流子迁移率、载流子密度、电子电荷和薄层电导率”。正确的表述应为“μ = σ/ne ”，而非“μ = ne/σ ”。本文的PDF版和HTML版均已对此进行了更正。
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