基于 VO₂ 的两端器件中使用 976nm 激光二极管的激光调控 60mA 电流开关。

Laser-Regulated 60 mA Current Switching in VO₂-Based Two-Terminal Device Using 976 nm Laser Diode.

机构信息

School of Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.

Interdisciplinary Program of Biomedical Mechanical and Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.

出版信息

J Nanosci Nanotechnol. 2019 Mar 1;19(3):1620-1625. doi: 10.1166/jnn.2019.16174.

DOI:10.1166/jnn.2019.16174

PMID:30469233

Abstract

By incorporating a high-power 976 nm laser diode (LD), we demonstrated laser-regulated current switching in a two-terminal planar device based on a vanadium dioxide (VO₂) thin film. The VO₂ thin film was grown by pulsed laser deposition method and etched to sub-millimeter dimension for the fabrication of a two-terminal device. The reversible current switching was implemented by controlling the on/off state of the LD, which illuminates the VO₂-based device. The transient responses of the device currents were analyzed when the device was excited with laser pulses of various repetition rates of up to 5.0 Hz with a pulse width fixed as 75 ms. A switching contrast between off- and on-state currents was calculated as ~9530, and average rising and falling times were measured as ~31 and ~21 ms, respectively.

摘要

通过结合高功率 976nm 激光二极管（LD），我们在基于二氧化钒（VO₂）薄膜的两端平面器件中演示了激光调节的电流开关。VO₂ 薄膜采用脉冲激光沉积法生长，并刻蚀至亚毫米尺寸，用于制造两端器件。通过控制 LD 的通断状态来实现可逆电流开关，LD 可以照射 VO₂ 基器件。当用脉冲宽度固定为 75ms 的不同重复率（高达 5.0Hz）的激光脉冲激励器件时，分析了器件电流的瞬态响应。关态和通态电流之间的开关对比度计算为~~9530，平均上升和下降时间分别测量为~~31ms 和~21ms。