Kim Jihoon, Choi Sungwook, Lee Seul-Lee, Kim Min Seok, Kim Do Kyung, Kim Bong-Jun, Lee Yong Wook
School of Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
Interdisciplinary Program of Biomedical Mechanical & Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
J Nanosci Nanotechnol. 2020 Jan 1;20(1):420-426. doi: 10.1166/jnn.2020.17270.
Bidirectional current gating was realized in a vanadium dioxide (VO₂) thin film-based two-terminal heterostructure device using a near-infrared laser diode (LD) with a center wavelength of 976 nm. The VO₂ thin film used in the device fabrication was grown through pulsed laser deposition on a Si substrate with an aluminum nitride (AIN) buffer layer. The phase transition temperature of the fabricated VO₂/AIN/Si heterostructure device was ~78 °C, which is higher by ~10 °C than that of the device based on a conventional VO₂ thin film grown on a sapphire (Al₂O₃) substrate. Bidirectional current gating up to 60 mA was realized by directly irradiating the exposed thin film surface with the focused laser beam. The transient responses of the current flowing through the device were investigated for various pulse widths and repetition rates of the focused laser beam. The average switching contrast between off- and on-states was measured as ~9993. The average rise time of the current gating was ~31.5 ms with a much shorter fall time of ~4.0 ms. Our VO₂/AIN/Si heterostructure device could provide a high on-state current and fast response due to a smaller device dimension and higher phase transition temperature compared with previous implementations.
利用中心波长为976 nm的近红外激光二极管（LD），在基于二氧化钒（VO₂）薄膜的两终端异质结构器件中实现了双向电流门控。器件制造中使用的VO₂薄膜通过脉冲激光沉积生长在具有氮化铝（AIN）缓冲层的硅衬底上。制备的VO₂/AIN/Si异质结构器件的相变温度约为78°C，比基于生长在蓝宝石（Al₂O₃）衬底上的传统VO₂薄膜的器件高约10°C。通过用聚焦激光束直接照射暴露的薄膜表面，实现了高达60 mA的双向电流门控。针对聚焦激光束的各种脉冲宽度和重复率，研究了流过器件的电流的瞬态响应。关态和开态之间的平均开关对比度测量为约9993。电流门控的平均上升时间约为31.5 ms，下降时间短得多，约为4.0 ms。与先前的实现相比，我们的VO₂/AIN/Si异质结构器件由于器件尺寸较小和相变温度较高，可提供高导通电流和快速响应。
