Choi Jong Won, Lee Chang Min, Park Chae Hee, Lim Jun Hyung, Park Geun Chul, Joo Jinho
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 16419, South Korea.
Sungkyunkwan University Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, 16419, South Korea.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1640-1644. doi: 10.1166/jnn.2019.16186.
In this study, ZnO nanorods (NRs) were synthesized using the hydrothermal method, and the effects of annealing temperature (150 °C-600 °C) on morphology, crystallinity, defects states of the NRs, and electrical property of the -type ZnO NRs/-type Si heterojunction diodes were investigated. No appreciable changes in the morphology and crystal structure of the ZnO NRs were observed with increasing annealing temperature up to 450 °C. As the temperature increased to 600 °C, the average length and diameter of the NRs decreased due to the partial melting and sintering in the NRs. From the X-ray photoelectron spectroscopy (XPS) results, the concentration of internal oxygen vacancies decreased with increasing annealing temperature to 450 °C due to thermal diffusion of oxygen vacancies to the surface. The electrical conductivity of the NRs increased to 450 °C, which was attributed to the increased crystallinity and low defects concentration (oxygen vacancy) in the NRs. Conversely, the electrical conductivity degraded at 600 °C due to the decreased effective contact area.
在本研究中，采用水热法合成了氧化锌纳米棒（NRs），并研究了退火温度（150℃-600℃）对NRs的形貌、结晶度、缺陷态以及n型氧化锌NRs/n型硅异质结二极管电学性能的影响。在退火温度升高至450℃之前，未观察到氧化锌NRs的形貌和晶体结构有明显变化。当温度升至600℃时，由于NRs内部的部分熔化和烧结，NRs的平均长度和直径减小。从X射线光电子能谱（XPS）结果来看，由于氧空位向表面的热扩散，内部氧空位的浓度随着退火温度升高至450℃而降低。NRs的电导率在450℃时升高，这归因于NRs结晶度的提高和缺陷浓度（氧空位）的降低。相反，在600℃时电导率下降，这是由于有效接触面积减小所致。
