Shin Myeong-Choel, Kim Hyun-Ah, Ahn Byung-Sub, Cui Hua-Feng, Kim Se Young, Kang Ey-Goo
Department of Photovoltaic Engineering, Far East University, Chungbuk 369-700, Republic of Korea.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1720-1723. doi: 10.1166/jnn.2019.16208.
This research was about field ring for 3.3 kV planar gate power IGBT. Therefore, we designed optimal field ring for 3.3 kV power IGBT and we analyzed the electrical characteristics of 3.3 kV planar gate power IGBT according to parameters of field ring. Based on this background, we obtained 3.3 kV high breakdown voltage and 2.9 V on state voltage drop for 3.3 kV planar gate power IGBT. To obtain high breakdown voltage, we confirm that the counts of field ring were 23. And we obtained optimal parameters. The gap distance between field rings to field ring was 13 m and the width of field ring was 5 m. This design technology will be adapt field stop IGBT and super junction IGBT. Thyristor device for power conversion switch will be replaced to super high voltage power IGBT.
本研究是关于3.3 kV平面栅极功率绝缘栅双极型晶体管（IGBT）的场限环。因此，我们为3.3 kV功率IGBT设计了优化的场限环，并根据场限环的参数分析了3.3 kV平面栅极功率IGBT的电气特性。基于此背景，我们获得了3.3 kV平面栅极功率IGBT的3.3 kV高击穿电压和2.9 V导通状态压降。为了获得高击穿电压，我们确定场限环的数量为23个。并且我们获得了优化参数。场限环之间的间隙距离为13μm，场限环的宽度为5μm。这种设计技术将适用于场截止IGBT和超级结IGBT。用于功率转换开关的晶闸管器件将被超高压功率IGBT所取代。
