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具有分离n缓冲层的超结绝缘栅双极晶体管关断损耗的改善

Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers.

作者信息

Kim Ki Yeong, Noh Joo Seok, Yoon Tae Young, Kim Jang Hyun

机构信息

School of Electrical Engineering, Pukyong National University, Busan 48513, Korea.

出版信息

Micromachines (Basel). 2021 Nov 19;12(11):1422. doi: 10.3390/mi12111422.

DOI:10.3390/mi12111422
PMID:34832833
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8623645/
Abstract

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E) drops by about 7% when on-state voltage () and breakdown voltage (BV) are similar. increases by about 0.5% and BV decreases by only about 0.8%.

摘要

在本研究中，我们提出了一种具有分离n缓冲层的超级结绝缘栅双极晶体管（SJBT），以解决关断期间载流子湮灭所需的相对较长时间。这一设计在保持类似的导通状态特性和击穿电压的同时改善了关断特性。使用Synopsys Sentaurus技术计算机辅助设计（TCAD）模拟工具对器件的电学特性进行了模拟，并且我们将传统的SJBT与具有分离n缓冲层的SJBT进行了比较。模拟工具结果表明，当导通状态电压（）和击穿电压（BV）相似时，关断损耗（E）下降约7%。 增加约0.5%，而BV仅下降约0.8%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/f69568c3a78b/micromachines-12-01422-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/37f0b7d86b80/micromachines-12-01422-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/49d131e5e9ea/micromachines-12-01422-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/8214f063ac3d/micromachines-12-01422-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/5da239439c2f/micromachines-12-01422-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/153664497b25/micromachines-12-01422-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/e194bfbb7f00/micromachines-12-01422-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/e988476561b0/micromachines-12-01422-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/2e9d8bb2211e/micromachines-12-01422-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/f69568c3a78b/micromachines-12-01422-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/37f0b7d86b80/micromachines-12-01422-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/49d131e5e9ea/micromachines-12-01422-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/8214f063ac3d/micromachines-12-01422-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/5da239439c2f/micromachines-12-01422-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/153664497b25/micromachines-12-01422-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/e194bfbb7f00/micromachines-12-01422-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/e988476561b0/micromachines-12-01422-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/2e9d8bb2211e/micromachines-12-01422-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f996/8623645/f69568c3a78b/micromachines-12-01422-g009.jpg

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