Xu Luhua, Wang Yun, Kumar Amar, El-Fiky Eslam, Mao Deng, Tamazin Heba, Jacques Maxime, Xing Zhenping, Saber Md Ghulam, Plant David V
Opt Express. 2018 Nov 12;26(23):29873-29885. doi: 10.1364/OE.26.029873.
We demonstrate a compact high-performance adiabatic 3-dB coupler for the silicon-on-insulator platform. The refractive index of the gap region between two coupling waveguides is effectively increased using subwavelength grating, which leads to high-performance operation and a compact design footprint, with a mode-evolution length of only 25 µm and an entire device length of 65 µm. The designed adiabatic 3-dB coupler has been fabricated using electron beam lithography and the feature size used in our design is CMOS compatible. The fabricated device is characterized in the wavelength range from 1500 nm to 1600 nm, with a measured power splitting ratio better than 3 ± 0.27 dB and an average insertion loss of 0.20 dB.
我们展示了一种用于绝缘体上硅平台的紧凑型高性能绝热3分贝耦合器。利用亚波长光栅有效地提高了两个耦合波导之间间隙区域的折射率,这导致了高性能的运行和紧凑的设计尺寸,模式演化长度仅为25微米,整个器件长度为65微米。所设计的绝热3分贝耦合器已采用电子束光刻技术制造,我们设计中使用的特征尺寸与CMOS兼容。所制造的器件在1500纳米至1600纳米的波长范围内进行了表征,测得的功率分配比优于3±0.27分贝,平均插入损耗为0.20分贝。