Takehira Hiroshi, Karim Mohammad Razaul, Shudo Yuta, Fukuda Masahiro, Mashimo Tsutomu, Hayami Shinya
Department of Chemistry, Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, Japan.
Department of Chemistry, School of Physical Sciences, Shahjalal University of Science & Technology, Sylhet, 3114, Bangladesh.
Sci Rep. 2018 Nov 26;8(1):17392. doi: 10.1038/s41598-018-35668-x.
Chlorine on graphene (G) matrices was doped by pulsed plasma stimulation on graphite electrode submerged in organochlorine solvents (CHCl, CHCl, CCl). The study of work function by Kelvin probe force microscopy (KPFM) measurement clearly indicates that Cl-doped G behave like semiconductor and GG@CHCl exhibits the lowest value for the work function. We propose that this report not only represents a new route for tuning the semiconductivity of G but also indicates that doping level of halogen on G based carbon framework can be controlled by pulsed plasma treatment of carbon materials on various organohalogen derivatives.
通过对浸没在有机氯溶剂（CHCl、CHCl、CCl）中的石墨电极进行脉冲等离子体刺激，在石墨烯（G）基体上掺杂氯。通过开尔文探针力显微镜（KPFM）测量功函数的研究清楚地表明，Cl掺杂的G表现得像半导体，并且GG@CHCl的功函数值最低。我们认为，本报告不仅代表了一种调节G半导体性的新途径，还表明基于G的碳骨架上卤素的掺杂水平可以通过对各种有机卤素衍生物上的碳材料进行脉冲等离子体处理来控制。
