Lee Hyeonju, Kwon Jin-Hyuk, Bae Jin-Hyuk, Park Jaehoon, Seo Cheonghoon
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
School of Electronics, Kyungpook National University, Daegu 41566, Korea.
J Nanosci Nanotechnol. 2019 Apr 1;19(4):2371-2374. doi: 10.1166/jnn.2019.16005.
We investigated the electrical stability of bottom-gate/top-contact-structured indium oxide (In₂O₃) thin-film transistors (TFTs) in atmospheric air and under vacuum. The solution-processed In₂O₃ film exhibits a nanocrystalline morphology with grain boundaries. The fabricated In₂O₃ TFTs operate in an -type enhancement mode. Over repeated TFT operation under vacuum, the TFTs exhibit a slight increase in the field-effect mobility, possibly due to multiple instances of the "trapping and release" behavior of electrons at grain boundaries. On the other hand, a decrease in the fieldeffect mobility and an increase in the hysteresis are observed as the measurement continues in atmospheric air. These results suggest that the electrical stability of solution-processed In₂O₃ TFTs is significantly affected by the electron-trapping phenomenon at crystal grain boundaries in the In₂O₃ semiconductor and the electrostatic interactions between electrons and polar water molecules.
我们研究了底栅/顶接触结构的氧化铟（In₂O₃）薄膜晶体管（TFT）在大气和真空环境下的电学稳定性。通过溶液处理制备的In₂O₃薄膜呈现出具有晶界的纳米晶体形态。所制备的In₂O₃ TFT以n型增强模式工作。在真空环境下重复进行TFT操作时，TFT的场效应迁移率略有增加，这可能是由于电子在晶界处多次发生“捕获和释放”行为所致。另一方面，在大气环境中持续测量时，会观察到场效应迁移率降低以及滞后现象增加。这些结果表明，溶液处理的In₂O₃ TFT的电学稳定性受到In₂O₃半导体中晶粒边界处的电子捕获现象以及电子与极性水分子之间的静电相互作用的显著影响。
