Cai Zhengang, Tuokedaerhan Kamale, Yang Linyu, Huang Zhenhua, Guo Chaozhong, Azamat Raikhan, Sagidolda Yerulan
Key Laboratory of Solid State Physics and Devices, Xinjiang University Urumqi Xinjiang 830046 China
School of Physics Science and Technology, Xinjiang University Urumqi Xinjiang 830046 China.
RSC Adv. 2025 May 16;15(21):16445-16454. doi: 10.1039/d5ra02132d. eCollection 2025 May 15.
The current international demand for thin-film transistors is growing, and reducing the time and economic cost of production while preparing thin-film transistors with excellent electrical properties will have a profound impact on the future development of thin-film transistors. In this paper, we choose the sol-gel method to prepare IZO TFTs, which can reduce the production cost and cycle time by 60% compared with the preparation method that requires vacuum conditions. Since the annealing temperature has a great influence on the electrical properties of IZO TFTs, in this study, we focus on the effect of different annealing temperatures on the electrical properties of IZO TFT devices, and analyze and study the results of the test results of the film structural properties, optical properties, surface morphology, Ultimately, it was found that IZO TFT devices with excellent electrical properties were obtained when the annealing temperature was 350 °C. The turn-off current ( = 2.52 × 10 A), threshold voltage ( = 0.8 V), and subthreshold swing (SS = 0.25 V dec) were minimized. The highest switching current ratio ( / = 1.58 × 10) and high mobility of 28.71 cm V S were achieved. The average transmittance of the films is as high as 98.96%.
当前国际上对薄膜晶体管的需求不断增长，在制备具有优异电学性能的薄膜晶体管时降低生产时间和经济成本，将对薄膜晶体管的未来发展产生深远影响。在本文中，我们选择溶胶-凝胶法来制备IZO薄膜晶体管，与需要真空条件的制备方法相比，该方法可将生产成本和周期时间降低60%。由于退火温度对IZO薄膜晶体管的电学性能有很大影响，在本研究中，我们重点研究不同退火温度对IZO薄膜晶体管器件电学性能的影响，并对薄膜结构性能、光学性能、表面形貌的测试结果进行分析研究。最终发现，当退火温度为350℃时，可获得具有优异电学性能的IZO薄膜晶体管器件。关断电流（=2.52×10 A）、阈值电压（=0.8 V）和亚阈值摆幅（SS = 0.25 V dec）均最小化。实现了最高的开关电流比（ /=1.58×10）和28.71 cm V S的高迁移率。薄膜的平均透过率高达98.96%。
