利用扫描电子显微镜中的透射菊池衍射来量化纳米尺度下的几何必需位错密度。
Using transmission Kikuchi diffraction in a scanning electron microscope to quantify geometrically necessary dislocation density at the nanoscale.
作者信息
Liang X Z, Dodge M F, Jiang J, Dong H B
机构信息
Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH, UK; Department of Engineering, Engineering Building, Lancaster University, LA1 4YW, UK.
TWI Ltd., Great Abington, Cambridge CB21 6AL, UK.
出版信息
Ultramicroscopy. 2019 Feb;197:39-45. doi: 10.1016/j.ultramic.2018.11.011. Epub 2018 Nov 22.
It is challenging to quantify the geometrically necessary dislocation (GND) density at the nanoscale using conventional electron backscatter diffraction due to its limited spatial resolution. To overcome this problem, in this study, the transmission Kikuchi diffraction (TKD) technique is used to measure lattice orientation and to calculate the corresponding nanoscale GND density. Using the TKD method, a variation of GND density from 6 × 10 to 10 m has been measured in a welded super duplex stainless steel sample. The distribution of dislocation density is shown to be in good agreement with transmission electron microscope (TEM) result. Compared with dislocation measurements obtained by TEM, the TKD-GND method is revealed to be a relatively accurate, fast and accessible method.
由于传统电子背散射衍射的空间分辨率有限，在纳米尺度上量化几何必要位错（GND）密度具有挑战性。为了克服这个问题，在本研究中，采用透射菊池衍射（TKD）技术来测量晶格取向并计算相应的纳米尺度GND密度。使用TKD方法，在一个焊接超级双相不锈钢样品中测量到GND密度从6×10到10 m的变化。位错密度分布与透射电子显微镜（TEM）结果显示出良好的一致性。与通过TEM获得的位错测量结果相比，TKD-GND方法被证明是一种相对准确、快速且易于使用的方法。
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