Yong Sang Heon, Kim Sun Jung, Chae Heeyeop
School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
J Nanosci Nanotechnol. 2019 May 1;19(5):2882-2887. doi: 10.1166/jnn.2019.15892.
In this research, a flowable chemical vapor deposition (FCVD) process was developed to planarize particle-scattered surfaces for thin film encapsulation by atomic layer deposition (ALD). Nanometer-thick ALD layers are known to have good barrier properties owing to the conformal deposition of the films and their high density, but those barrier properties are vulnerable to degradation because of surface particles on the substrates. In this study, FCVD silicon oxide layer was applied to particlescattered surfaces as a planarization interlayer. Flowable silicon oxide thin films were deposited with tetrabutoxysiline and O₂ in an inductively coupled plasmas reactor. The chemical bonding structure of the flowable silicon oxide was verified with Fourier transform infrared spectroscopy. To confirm the planarization effect, particles 2 m in diameter were intentionally spread on the substrates by electrospray processing and nanometer-thick Al₂O₃ layers were deposited on top of the planarization interlayers. With the flowable silicon oxide interlayer and the same particle density on flexible substrates, the water vapor transmission rate was reduced to 1.2×10 g/(m² day) from 2.0×10 g/(m² day). The flowable silicon oxide layers are thus demonstrated to be effective interlayers to reduce the influence of particle contamination for ALD barrier films.
在本研究中，开发了一种可流动化学气相沉积（FCVD）工艺，用于通过原子层沉积（ALD）对存在颗粒散射的表面进行平面化处理，以实现薄膜封装。由于薄膜的保形沉积及其高密度，纳米厚的ALD层具有良好的阻隔性能，但由于基板上的表面颗粒，这些阻隔性能容易受到降解影响。在本研究中，将FCVD氧化硅层作为平面化中间层应用于存在颗粒散射的表面。在电感耦合等离子体反应器中，用四丁氧基硅烷和O₂沉积可流动氧化硅薄膜。用傅里叶变换红外光谱法验证了可流动氧化硅的化学键结构。为了确认平面化效果，通过电喷雾处理将直径为2μm的颗粒有意散布在基板上，并在平面化中间层顶部沉积纳米厚的Al₂O₃层。在柔性基板上使用可流动氧化硅中间层且颗粒密度相同时，水蒸气透过率从2.0×10 g/(m²·天)降低到1.2×10 g/(m²·天)。因此，可流动氧化硅层被证明是有效的中间层，可减少颗粒污染对ALD阻隔膜的影响。
