Wang Chun-Kai, Jiang Bing-Huang, Su Yu-Wei, Jeng Ru-Jong, Wang Yu-Jian, Chen Chih-Ping, Wong Ken-Tsung
Department of Chemical Engineering , Feng Chia University , Taichung 40724 , Taiwan.
Department of Materials Engineering , Ming Chi University of Technology , New Taipei City 243 , Taiwan.
ACS Appl Mater Interfaces. 2019 Jan 9;11(1):1125-1134. doi: 10.1021/acsami.8b17753. Epub 2018 Dec 24.
In this study, we synthesized 5,11-dihexyl-4,4,10,10-tetraoctylbenzo[1,2- b:4,5- b']bisthieno[4″,5″- b″:4‴,5‴- b‴]silolo[2″,3″- d:2‴,3‴- d']thiophene (ArSi) as a ladder-type electron-rich core for the preparation of three acceptor-donor-acceptor-type nonfullerene acceptors (NFAs)-ArSiID, ArSiID-F, and ArSiID-Cl-featuring (3-oxo-2,3-dihydro-1 H-inden-1-ylidene)malononitrile (ID), 2-(5,6-difluoro-3-oxo-2,3-dihydro-1 H-inden-1-ylidene)malononitrile (ID-F), and 2-(5,6-dichloro-3-oxo-2,3-dihydro-1 H-inden-1-ylidene)malononitrile (ID-Cl) as peripheral electron-poor units, respectively. These molecules exhibit strong absorption covering the region of 600-850 nm. The incorporation of the halogen atoms onto the terminal units adjusted the energy levels and light-harvesting ability of these materials. We employed the conjugated polymers J51 and PBDB-T, having middle optical energy gaps as donor together with these ArSi derivatives as acceptor to study the blend film morphology and the corresponding organic photovoltaic (OPV) performances. After optimization with device engineering works, a PBDB-T:ArSiID-F-based device with a power conversion efficiency up to 9.4% was achieved. This study is the first case to examine the effects of various halogen modifications on the performance of ArSi derivatives that serve as NFAs for OPVs. Our findings should encourage further investigations on this rarely studied core structure for optoelectronic applications.
在本研究中，我们合成了5,11-二己基-4,4,10,10-四辛基苯并[1,2 - b:4,5 - b']双噻吩并[4″,5″ - b″:4‴,5‴ - b‴]硅并环戊二烯并[2″,3″ - d:2‴,3‴ - d']噻吩（ArSi），作为一种梯型富电子核心，用于制备三种给体-受体-给体型非富勒烯受体（NFAs）——ArSiID、ArSiID-F和ArSiID-Cl，它们分别以（3-氧代-2,3-二氢-1H-茚-1-亚基）丙二腈（ID）、2-(5,6-二氟-3-氧代-2,3-二氢-1H-茚-1-亚基)丙二腈（ID-F）和2-(5,6-二氯-3-氧代-2,3-二氢-1H-茚-1-亚基)丙二腈（ID-Cl）作为外围缺电子单元。这些分子在600 - 850 nm区域表现出强烈吸收。在末端单元上引入卤原子调节了这些材料的能级和光捕获能力。我们采用具有中等光学能隙的共轭聚合物J51和PBDB-T作为给体，与这些ArSi衍生物作为受体一起，研究共混膜形态和相应的有机光伏（OPV）性能。经过器件工程优化后，实现了基于PBDB-T:ArSiID-F的器件，功率转换效率高达9.4%。本研究是首例考察各种卤代修饰对用作OPV的NFAs的ArSi衍生物性能影响的案例。我们的研究结果应会促使人们进一步研究这种在光电子应用中很少被研究的核心结构。
