Electrical transport and gas sensing characteristics of dielectrophoretically aligned MBE grown catalyst free InAs nanowires.

In this report, the precise alignment of catalyst free InAs nanowires (NWs) on pre-patterned Au microelectrodes by dielectrophoresis (DEP) technique for gas sensing applications is presented. The catalyst free InAs NWs have been grown on Si (111) substrate by molecular beam epitaxy (MBE) technique. The effect of dispersing solvents, electrode geometries and gaps, magnitude, frequency and duration of applied voltage etc, has been studied for aligning the InAs NWs by DEP technique. Current-voltage (I-V) measurements on the aligned NWs show linear behavior at room temperature (300 K), which changes to nonlinear at lower temperatures and higher voltages. The nonlinearity at lower temperatures and higher voltages is well explained by a space charge limited current contribution, which further gives a quantitative estimation of free charge carriers and trap density. The DEP aligned NWs exhibit good sensing response upon exposure to 10 ppm NO gas.