Wang Ying, Shan Chan, Piao Wei, Li Xing-Ji, Yang Jian-Qun, Cao Fei, Yu Cheng-Hao
Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China.
College of Information Engineering, Jimei University, Xiamen 361021, China.
Micromachines (Basel). 2018 Dec 14;9(12):659. doi: 10.3390/mi9120659.
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (STI) of 3.5 × 10 cm. Moreover, it has the advantages of a small footprint, no limitation in / design, and a small gate capacitance compared with the enclosed gate layout. Beside the Z gate layout, a non-radiation-hardened single gate layout and a radiation-hardened enclosed gate layout are simulated using the Sentaurus 3D technology computer-aided design (TCAD) software. First, the transfer characteristics curves (-) curves of the three layouts are compared to verify the radiation tolerance characteristic of the Z gate layout; then, the threshold voltage and the leakage current of the three layouts are extracted to compare their TID responses. Lastly, the threshold voltage shift and the leakage current increment at different radiation doses for the three layouts are presented and analyzed.
本文首次提出了一种具有Z栅极且改进了总电离剂量（TID）耐受性的n沟道金属氧化物半导体场效应晶体管（NMOSFET）版图。这种新颖的版图在浅沟槽隔离（STI）处具有3.5×10 cm的固定电荷密度时可实现抗辐射加固。此外，与封闭栅极版图相比，它具有占地面积小、设计无限制以及栅极电容小的优点。除了Z栅极版图外，还使用Sentaurus 3D技术计算机辅助设计（TCAD）软件对非抗辐射加固的单栅极版图和抗辐射加固的封闭栅极版图进行了模拟。首先，比较三种版图的转移特性曲线（-）曲线，以验证Z栅极版图的抗辐射特性；然后，提取三种版图的阈值电压和漏电流，以比较它们的TID响应。最后，给出并分析了三种版图在不同辐射剂量下的阈值电压漂移和漏电流增量。
