Na Jaeyeop, Cheon Jinhee, Kim Kwangsoo
Department of Electronic Engineering, Sogang University, Seoul 04107, Korea.
Materials (Basel). 2021 Jun 25;14(13):3554. doi: 10.3390/ma14133554.
In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N polysilicon split gate to the P polysilicon split gate. It has two separate P shielding regions under the gate to use the P split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.
本文提出了一种新型的4H-SiC分裂异质结栅极双沟槽金属氧化物半导体场效应晶体管（SHG-DTMOS），以提高开关速度并降低损耗。该器件通过将N型多晶硅分裂栅极改为P型多晶硅分裂栅极来改进分裂栅极双沟槽MOSFET（SG-DTMOS）。它在栅极下方有两个独立的P屏蔽区域，将P型分裂多晶硅栅极用作异质结体二极管并防止反向漏电流。SHG-DTMOS的静态和大多数动态特性几乎与SG-DTMOS相同。然而，由于异质结的作用，与传统双沟槽MOSFET（Con-DTMOS）和SG-DTMOS相比，反向恢复电荷分别提高了65.83%和73.45%，开关损耗分别提高了54.84%和44.98%。
