Graduate School of Science and Technology, Shizuoka University, 3-5-1, Johoku, Naka-ku, Hamamatsu, 432-8011, Japan.
Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku, Naka-ku, Hamamatsu, 432-8011, Japan.
Nat Commun. 2018 Dec 17;9(1):4813. doi: 10.1038/s41467-018-07278-8.
Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their momentum to the phonon bath. Here, we propose the Si electron-aspirator, a nanometer-scaled MOS device with a T-shaped branch, to go beyond this limit. The device utilizes the hydrodynamic nature of electrons due to the electron-electron scattering, by which the injected hot electrons transfer their momentum to cold electrons before they relax with the phonon bath. This momentum transfer induces an electron flow from the grounded side terminal without additional power sources. The operation is demonstrated by observing the output-current enhancement by a factor of about 3 at 8 K, which reveals that the electron-electron scattering can govern the electron transport in nanometer-scaled MOS devices, and increase their effective drivability.
在不增加输入功率的情况下实现电流增强是电子电路需要追求的一个关键问题。然而，金属氧化物半导体 (MOS) 晶体管的驱动能力受到源极注入电流的限制，而穿过源极的电子不可避免地会将其动量浪费在声子浴中。在这里，我们提出了 Si 电子抽吸器，这是一种具有 T 形分支的纳米级 MOS 器件，可突破这一限制。该器件利用了电子的动力学特性，通过电子-电子散射，注入的热电子在与声子浴弛豫之前将其动量传递给冷电子。这种动量传递会在没有额外电源的情况下引起从接地侧端子的电子流。通过在 8 K 下观察到约 3 倍的输出电流增强来证明该操作，这表明电子-电子散射可以控制纳米级 MOS 器件中的电子输运，并提高其有效驱动能力。
