Fujiwara A, Takahashi Y
Ntt Basic Research Laboratories, 3-1 Morinosata Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Nature. 2001 Mar 29;410(6828):560-2. doi: 10.1038/35069023.
The ultimate limit in the operation of an electronic device is the manipulation of a single charge. Such a limit has been achieved in single-electron tunnelling devices. However, these devices are based on multiple tunnel barriers and conductive islands, which are complex structures to fabricate. Here we demonstrate another type of device that can also manipulate elementary charge, but which is more suitable for large-scale integration. The device consists of two closely packed silicon wire-MOSFETs, which are commonly used building blocks of electronic circuits. We have developed a scheme to generate and store holes in the channels of either of these MOSFETs. Subsequently, holes can be transferred between the two MOSFETs at the level of an elementary charge, and their exact position can be monitored. This single-charge transfer device, which is operated at 25 K, is in effect a charge-coupled device. This is also the first realization of a silicon-based device that manipulates elementary charge.
电子设备运行的最终极限是对单个电荷的操控。在单电子隧穿器件中已经实现了这样的极限。然而，这些器件基于多个隧道势垒和导电岛，它们是复杂的制造结构。在此，我们展示了另一种类型的器件，它同样能够操控基本电荷，但更适合大规模集成。该器件由两个紧密排列的硅线 - MOSFET组成，而MOSFET是电子电路中常用的构建模块。我们已经开发出一种方案，可在这些MOSFET中任何一个的沟道中产生并存储空穴。随后，空穴能够以基本电荷的量级在两个MOSFET之间转移，并且可以监测它们的确切位置。这个在25K温度下运行的单电荷转移器件实际上是一个电荷耦合器件。这也是首个基于硅的操控基本电荷的器件的实现。
