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用于神经形态计算的二硫化钼器件中的离子调制和离子耦合效应。

Ionic modulation and ionic coupling effects in MoS devices for neuromorphic computing.

作者信息

Zhu Xiaojian, Li Da, Liang Xiaogan, Lu Wei D

机构信息

Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI, USA.

Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI, USA.

出版信息

Nat Mater. 2019 Feb;18(2):141-148. doi: 10.1038/s41563-018-0248-5. Epub 2018 Dec 17.

Abstract

Coupled ionic-electronic effects present intriguing opportunities for device and circuit development. In particular, layered two-dimensional materials such as MoS offer highly anisotropic ionic transport properties, facilitating controlled ion migration and efficient ionic coupling among devices. Here, we report reversible modulation of MoS films that is consistent with local 2H-1T' phase transitions by controlling the migration of Li ions with an electric field, where an increase/decrease in the local Li ion concentration leads to the transition between the 2H (semiconductor) and 1T' (metal) phases. The resulting devices show excellent memristive behaviour and can be directly coupled with each other through local ionic exchange, naturally leading to synaptic competition and synaptic cooperation effects observed in biology. These results demonstrate the potential of direct modulation of two-dimensional materials through field-driven ionic processes, and can lead to future electronic and energy devices based on coupled ionic-electronic effects and biorealistic implementation of artificial neural networks.

摘要

离子 - 电子耦合效应为器件和电路发展带来了有趣的机遇。特别是,诸如二硫化钼(MoS)之类的层状二维材料具有高度各向异性的离子传输特性,有助于实现可控的离子迁移以及器件间高效的离子耦合。在此,我们报告了通过电场控制锂离子迁移对二硫化钼薄膜进行的可逆调制,该调制与局部2H - 1T' 相变一致,其中局部锂离子浓度的增加/减少会导致2H(半导体)相和1T'(金属)相之间的转变。由此产生的器件表现出优异的忆阻行为,并且可以通过局部离子交换直接相互耦合,自然而然地产生了生物学中观察到的突触竞争和突触合作效应。这些结果证明了通过场驱动离子过程直接调制二维材料的潜力,并可能促成基于离子 - 电子耦合效应以及人工神经网络生物逼真实现的未来电子和能量器件。

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