Cruces Sofía, Ganeriwala Mohit Dineshkumar, Lee Jimin, Völkel Lukas, Braun Dennis, Grundmann Annika, Ran Ke, González Marín Enrique, Kalisch Holger, Heuken Michael, Vescan Andrei, Mayer Joachim, Godoy Andrés, Daus Alwin, Lemme Max Christian
Chair of Electronic Devices RWTH Aachen University Otto-Blumenthal-Str. 25 52074 Aachen Germany.
Department of Electronics and Computer Science Universidad de Granada Avenida de la Fuente Nueva S/N 18071 Granada Spain.
Small Sci. 2025 Jan 27;5(5):2400523. doi: 10.1002/smsc.202400523. eCollection 2025 May.
Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS flakes requiring a forming step to enable RS. Herein, present volatile RS with multilayer MoS grown by metal-organic chemical vapor deposition (MOCVD) with repeatable forming-free operation is presented. The devices show highly reproducible volatile RS with low operating voltages of ≈2 V and fast-switching times down to 130 ns considering their micrometer-scale dimensions. The switching mechanism is investigated based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, a physics-based compact model is developed and the implementation of the volatile memristors as artificial neurons in neuromorphic systems is exploredd.
层状二维半导体在其范德华（vdW）间隙及其表面展现出增强的离子迁移能力。这种效应可用于新兴存储器、选择器和神经形态计算设备中的电阻切换（RS）。迄今为止，所有基于横向二硫化钼（MoS）且具有银（Ag）离子迁移的挥发性RS器件均使用剥离的单晶MoS薄片进行演示，这些薄片需要一个形成步骤来实现RS。在此，展示了通过金属有机化学气相沉积（MOCVD）生长的多层MoS实现的具有可重复无形成操作的挥发性RS。考虑到其微米级尺寸，这些器件在约2V的低工作电压下显示出高度可重复的挥发性RS，且开关时间快至130ns。基于通过透射电子显微镜、电子输运建模和密度泛函理论的Ag离子表面迁移对开关机制进行了研究。最后，开发了一个基于物理的紧凑模型，并探索了将挥发性忆阻器作为神经形态系统中的人工神经元的实现。
