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基于二维材料的神经形态浮栅存储器。

Neuromorphic Floating-Gate Memory Based on 2D Materials.

作者信息

Hu Chao, Liang Lijuan, Yu Jinran, Cheng Liuqi, Zhang Nianjie, Wang Yifei, Wei Yichen, Fu Yixuan, Wang Zhong Lin, Sun Qijun

机构信息

School of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102627, P. R. China.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.

出版信息

Cyborg Bionic Syst. 2025 Apr 22;6:0256. doi: 10.34133/cbsystems.0256. eCollection 2025.

DOI:10.34133/cbsystems.0256
PMID:40264852
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12012298/
Abstract

In recent years, the rapid progression of artificial intelligence and the Internet of Things has led to a significant increase in the demand for advanced computing capabilities and more robust data storage solutions. In light of these challenges, neuromorphic computing, inspired by human brain's architecture and operation principle, has surfaced as a promising answer to the growing technological demands. This novel methodology emulates the biological synaptic mechanisms for information processing, enabling efficient data transmission and computation at the identical position. Two-dimensional (2D) materials, distinguished by their atomic thickness and tunable physical properties, exhibit substantial potential in emulating synaptic plasticity and find broad applications in neuromorphic computing. With respect to device architecture, memory devices based on floating-gate (FG) structures demonstrate robust data retention capabilities and have been widely used in the realm of flash memory. This review begins with a succinct introduction to 2D materials and FG transistors, followed by an in-depth discussion on remarkable research progress in the integration of 2D materials with FG transistors for applications in neuromorphic computing and memory. This paper offers a thorough review of the existing research landscape, encapsulating the notable progress in swiftly expanding field. In conclusion, it addresses the constraints encountered by FG transistors using 2D materials and delineates potential future trajectories for investigation and innovation within this area.

摘要

近年来,人工智能和物联网的迅速发展导致对先进计算能力和更强大数据存储解决方案的需求大幅增加。鉴于这些挑战,受人类大脑架构和运作原理启发的神经形态计算已成为应对不断增长的技术需求的一个有前景的答案。这种新颖的方法模拟了用于信息处理的生物突触机制,能够在同一位置实现高效的数据传输和计算。二维(2D)材料以其原子厚度和可调节的物理特性而著称,在模拟突触可塑性方面具有巨大潜力,并在神经形态计算中有着广泛应用。在器件架构方面,基于浮栅(FG)结构的存储器件展现出强大的数据保持能力,并已在闪存领域得到广泛应用。本综述首先简要介绍二维材料和FG晶体管,随后深入讨论二维材料与FG晶体管集成在神经形态计算和存储器应用方面的显著研究进展。本文全面回顾了现有研究概况,总结了这个迅速发展领域的显著进展。最后,阐述了使用二维材料的FG晶体管所面临的限制,并描绘了该领域未来潜在的研究和创新方向。

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本文引用的文献

1
Photo-modulated optical and electrical properties of graphene.石墨烯的光调制光学和电学性质。
Nanophotonics. 2022 Jan 14;11(5):917-940. doi: 10.1515/nanoph-2021-0582. eCollection 2022 Feb.
2
2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory.具有碲烯浮栅的二维范德华异质结构用于宽范围和多位光电存储器。
ACS Nano. 2024 Feb 6;18(5):4131-4139. doi: 10.1021/acsnano.3c08567. Epub 2024 Jan 11.
3
The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications.
用于器件应用的二维材料与铁电体的集成
ACS Nano. 2024 Jan 23;18(3):1778-1819. doi: 10.1021/acsnano.3c05711. Epub 2024 Jan 5.
4
Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor.基于全范德瓦尔斯光电铁电场效应晶体管的集成内存传感器与人工视觉计算
Adv Sci (Weinh). 2024 Jan;11(3):e2305679. doi: 10.1002/advs.202305679. Epub 2023 Nov 29.
5
PZT-Enabled MoS Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing.基于锆钛酸铅(PZT)的二硫化钼(MoS)浮栅晶体管:克服玻尔兹曼限制并实现用于高精度神经形态计算的超低能耗
Nano Lett. 2023 Nov 22;23(22):10196-10204. doi: 10.1021/acs.nanolett.3c02721. Epub 2023 Nov 5.
6
Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications.用于内存计算应用的铁电范德华异质结构制造的人工视觉系统
ACS Nano. 2023 Nov 14;17(21):21297-21306. doi: 10.1021/acsnano.3c05771. Epub 2023 Oct 26.
7
A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing.一种用于多模态储层计算的基于二维异质结构的多功能浮栅存储器件。
Adv Mater. 2024 Jan;36(3):e2308502. doi: 10.1002/adma.202308502. Epub 2023 Dec 2.
8
2D Dual Gate Field-Effect Transistor Enabled Versatile Functions.二维双栅场效应晶体管实现的多功能
Small. 2024 Jan;20(2):e2304173. doi: 10.1002/smll.202304173. Epub 2023 Sep 13.
9
Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts.基于相位工程边缘接触的同时具备超快和稳健特性的二维闪存器件。
Nat Commun. 2023 Sep 13;14(1):5662. doi: 10.1038/s41467-023-41363-x.
10
The future transistors.未来的晶体管。
Nature. 2023 Aug;620(7974):501-515. doi: 10.1038/s41586-023-06145-x. Epub 2023 Aug 16.