Lee Wonseok, Oh Juwon, Kwon Woosung, Lee Sang Hyeon, Kim Dongho, Kim Sungjee
Spectroscopy Laboratory for Functional π-Electronic Systems and Department of Chemistry , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , South Korea.
Department of Chemical and Biological Engineering , Sookmyung Women's University , 100 Cheongpa-ro 47-gil , Seoul 04310 , South Korea.
Nano Lett. 2019 Jan 9;19(1):308-317. doi: 10.1021/acs.nanolett.8b03923. Epub 2018 Dec 28.
We report lightly Ag/Mn co-doped CdS/ZnS (core/shell) nanocrystals (NCs) as a model system for studying interactions between co-dopants and between NCs and dopants. The co-doped NCs were prepared with a varying average number of Ag dopant atoms per CdS core of the NC from zero to eight; at the same time, the depth profile of the Mn dopants in the ZnS shells was controlled to be either close to or far from the Ag dopants. The incorporation of an average of one to two Ag dopant atoms per NC increased the band-edge photoluminescence (PL); however, it was quenched at higher doping concentration. This alternation is attributed to change of the Ag ion occupancy from PL-enhancing interstitial sites to PL-quenching substitutional sites. Mn PL increased as the number of Ag atoms per NC increased up to approximately seven and then decreased. For NCs doped only with Ag ions, the Ag dopants in substitutional sites acted as PL-quenching hole traps. In Ag/Mn co-doped NCs, the Ag dopants acted as Dexter-type relay sites that enhanced the energy transfer from NC to Mn ions; this effect increased as the distance between Ag and Mn dopants decreased. This model study demonstrates that the simultaneous control of dopant concentrations and spatial distributions in co-doped semiconductor NCs enables sophisticated control of their optical properties.
我们报道了轻度Ag/Mn共掺杂的CdS/ZnS(核/壳)纳米晶体(NCs),将其作为研究共掺杂剂之间以及NCs与掺杂剂之间相互作用的模型体系。制备的共掺杂NCs中,每个CdS核的Ag掺杂原子平均数量从零到八个不等;同时,控制ZnS壳层中Mn掺杂剂的深度分布与Ag掺杂剂接近或远离。每个NC平均掺入一到两个Ag掺杂原子会增加带边光致发光(PL);然而,在更高的掺杂浓度下它会被淬灭。这种变化归因于Ag离子占据位置从增强PL的间隙位置转变为淬灭PL的替代位置。随着每个NC中Ag原子数量增加到大约七个,Mn PL增加,然后下降。对于仅掺杂Ag离子的NCs,替代位置的Ag掺杂剂充当淬灭PL的空穴陷阱。在Ag/Mn共掺杂的NCs中,Ag掺杂剂充当Dexter型中继位点,增强了从NC到Mn离子的能量转移;随着Ag和Mn掺杂剂之间距离的减小,这种效应增强。该模型研究表明,同时控制共掺杂半导体NCs中的掺杂剂浓度和空间分布能够精确控制其光学性质。