Yang Fan, Han Guowei, Yang Jian, Zhang Meng, Ning Jin, Yang Fuhua, Si Chaowei
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2018 Dec 28;10(1):15. doi: 10.3390/mi10010015.
A MEMS fabrication process with through-glass vias (TGVs) by laser drilling was presented, and reliability concerns about MEMS packaging with TGV, likes debris and via metallization, were overcome. The via drilling process on Pyrex 7740 glasses was studied using a picosecond laser with a wavelength of 532 nm. TGVs were tapered, the minimum inlet diameter of via holes on 300 μm glasses was 90 μm, and the relative outlet diameter is 48 μm. It took about 9 h and 58 min for drilling 4874 via holes on a four-inch wafer. Debris in ablation was collected only on the laser inlet side, and the outlet side was clean enough for bonding. The glass with TGVs was anodically bonded to silicon structures of MEMS sensors for packaging, electron beam evaporated metal was used to cover the bottom, the side, and the surface of via holes for vertical electrical interconnections. The metal was directly contacted to silicon with low contact resistance. A MEMS gyroscope was made in this way, and the getter was used for vacuum maintenance. The vacuum degree maintained under 1 Pa for more than two years. The proposed MEMS fabrication flow with a simple process and low cost is very suitable for mass production in industry.
提出了一种通过激光钻孔制造带有玻璃通孔(TGV)的MEMS工艺,并克服了与带有TGV的MEMS封装相关的可靠性问题,如碎片和通孔金属化。使用波长为532nm的皮秒激光研究了在派热克斯7740玻璃上的通孔钻孔工艺。TGV呈锥形,300μm玻璃上通孔的最小入口直径为90μm,相对出口直径为48μm。在四英寸晶圆上钻4874个通孔大约需要9小时58分钟。烧蚀产生的碎片仅收集在激光入口侧,出口侧足够干净以便进行键合。将带有TGV的玻璃阳极键合到MEMS传感器的硅结构上进行封装,采用电子束蒸发金属覆盖通孔的底部、侧面和表面以实现垂直电气互连。金属与硅直接接触,接触电阻低。通过这种方式制造了一个MEMS陀螺仪,并使用吸气剂来维持真空。真空度在1Pa以下保持了两年多。所提出的MEMS制造流程工艺简单、成本低,非常适合工业大规模生产。