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单硼原子掺杂氮化硼边缘作为无金属的 N 固定催化剂。

A single boron atom doped boron nitride edge as a metal-free catalyst for N fixation.

机构信息

School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4001, Australia.

出版信息

Phys Chem Chem Phys. 2019 Jan 21;21(3):1110-1116. doi: 10.1039/c8cp07064d. Epub 2019 Jan 2.

DOI:10.1039/c8cp07064d
PMID:30601494
Abstract

N fixation is one of the most challenging tasks in chemistry. Recently, tremendous efforts have been devoted to transition metal-based materials. However, metal-free catalysts for N conversion have been rarely explored. Here, by using density functional theory, we predict, for the first time that a single B-atom decorated BN edge (B@BN) can act as a metal-free catalyst for the conversion of an N molecule to NH under ambient conditions. N fixation on the B@BN edge exhibits an extremely low overpotential of only 0.13 V through a distal mechanism. Moreover, fast removal of the produced NH molecule is observed with an uphill Gibbs free energy change of only 0.35 V, which is lower than those of ever-reported electrocatalysts such as Mo-doped BN and 2D Mxene. Our findings highlight a novel single atom metal-free catalyst for N fixation, providing a cost-efficient process for sustainable NH production.

摘要

固氮是化学领域最具挑战性的任务之一。最近,人们投入了大量精力研究基于过渡金属的材料。然而,对于转化氮的无金属催化剂的研究却很少。在这里,我们首次通过密度泛函理论预测,单原子硼修饰的 BN 边缘(B@BN)可以作为无金属催化剂,在环境条件下将 N 分子转化为 NH。B@BN 边缘上的固氮通过远程机制表现出极低的过电势,仅为 0.13V。此外,我们观察到所生成的 NH 分子的快速去除,其 uphill Gibbs 自由能变化仅为 0.35V,低于已报道的电催化剂,如 Mo 掺杂 BN 和二维 MXene。我们的研究结果突出了一种新型的单原子无金属固氮催化剂,为可持续 NH 生产提供了一种具有成本效益的方法。

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