Division of Solid-State Electronics, Department of Engineering Sciences, The Ångström Laboratory , Uppsala University , P.O. Box 534, SE-751 21 Uppsala , Sweden.
IBM T. J. Watson Research Center , Yorktown Heights , New York 10598 , United States.
ACS Sens. 2019 Feb 22;4(2):427-433. doi: 10.1021/acssensors.8b01394. Epub 2019 Jan 25.
The sensitivity of metal oxide semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced device noise, 2.1 × 10 V μm/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction, thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
金属氧化物半导体场效应晶体管 (MOSFET) 基纳米传感器的灵敏度最终受到栅极氧化物/半导体界面处载流子俘获/解吸过程引起的噪声的限制。我们设计了肖特基结栅硅纳米线场效应晶体管 (SiNW-SJGFET) 传感器，其中肖特基结取代了噪声较大的氧化物/半导体界面。与在反型和耗尽模式下工作的具有氧化物/半导体界面的参考器件相比，我们的传感器表现出显著降低的器件噪声，在 1 Hz 时为 2.1×10 V μm/Hz。通过用肖特基结包裹纳米线，可以进一步提高性能，从而消除所有的氧化物/半导体界面。因此，具有纳氏响应极限的传感表面的低噪声 SiNW-SJGFET 器件的组合有望在未来实现高信噪比传感器应用。
