Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Korea.
Sensors (Basel). 2021 Jun 19;21(12):4213. doi: 10.3390/s21124213.
In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.
在这项研究中，开发了一种由双门（DG）结构硅纳米线（SiNW）场效应晶体管（FET）作为换能器和钠离子选择性膜扩展门（EG）作为传感单元组成的高灵敏度和选择性钠离子传感器。通过使用静电纺丝聚维酮纳米纤维作为 SiNW 图案转移的模板，对绝缘体上硅衬底进行干法刻蚀，制造出 SiNW 通道 DG FET。通过构建钠离子传感器来验证钠离子对其他离子的选择性和灵敏度，其中 EG 通过钠离子选择性膜与 SiNW 通道 DG FET 电连接。对于 NaCl 溶液，获得了 1464.66 mV/dec 的超高灵敏度。基于 SiNW 通道 FET 的钠离子传感器对 CaCl、KCl 和 pH 缓冲溶液的低灵敏度表明其具有优异的选择性。通过分析滞后和漂移，验证了钠离子传感器在非理想行为下的可靠性和稳定性。因此，基于 SiNW 通道 DG FET 的钠离子传感器，包含钠离子选择性膜 EG，可以应用于汗液或血液中钠离子的准确检测。
