30吉赫兹异质集成电容式硅基磷化铟马赫-曾德尔调制器。

30 GHz heterogeneously integrated capacitive InP-on-Si Mach-Zehnder modulators.

作者信息

Thiessen Torrey, Grosse Philippe, Fonseca Jeremy Da, Billondeau Patricia, Szelag Bertrand, Jany Christophe, Poon Joyce K S, Menezo Sylvie

出版信息

Opt Express. 2019 Jan 7;27(1):102-109. doi: 10.1364/OE.27.000102.

DOI:10.1364/OE.27.000102

PMID:30645351

Abstract

We demonstrate high-bandwidth O-band Mach-Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase shifters that are compatible with heterogeneous laser fabrication processes. An electro-optic conversion efficiency of 1.3 V⋅cm and a 3 dB bandwidth of up to 30 GHz was observed for a phase modulator length of 250 μm at a 0 V bias. Open eye patterns were observed at up to 25 Gb/s.

摘要

我们展示了具有硅基磷化铟（InP-on-Si）电容式相移器的高带宽O波段马赫曾德尔调制器，该调制器与异质激光制造工艺兼容。在0 V偏置下，对于长度为250μm的相位调制器，观察到电光转换效率为1.3 V·cm，3 dB带宽高达30 GHz。在高达25 Gb/s的速率下观察到了张开的眼图。