Van Gasse Kasper, Wang Ruijun, Roelkens Gunther
Opt Express. 2019 Jan 7;27(1):293-302. doi: 10.1364/OE.27.000293.
Hybrid III-V-on-silicon semiconductor optical amplifiers with high-gain and high-output-power are important in many applications such as transceivers, integrated microwave photonics and photonic beamforming. In this work we present the design, fabrication and characterization of high-gain, high-output-power III-V-on-silicon semiconductor optical amplifiers. The amplifiers support a hybrid III-V/Si optical mode to reduce confinement in the active region and increase the saturation power. A small-signal gain of 27 dB, a saturation power of 17.24 dBm and an on-chip output power of 17.5 dBm is measured for a current density of 4.9 kA/cm (power consumption of 540 mW) at room temperature for an amplifier with a total length of 1.45 mm. The amplifiers were realized using a 6 quantum well InGaAsP active region, which was previously used to fabricate high-speed directly modulated DFB lasers, enabling their co-integration.
具有高增益和高输出功率的混合III-V族化合物/硅半导体光放大器在诸如收发器、集成微波光子学和光子波束形成等许多应用中都很重要。在这项工作中，我们展示了高增益、高输出功率的III-V族化合物/硅半导体光放大器的设计、制造和特性。这些放大器支持混合III-V族化合物/硅光学模式，以减少有源区的限制并提高饱和功率。对于一个总长度为1.45毫米的放大器，在室温下，当电流密度为4.9 kA/cm²（功耗为540 mW）时，测量到的小信号增益为27 dB、饱和功率为17.24 dBm、片上输出功率为17.5 dBm。这些放大器是使用6量子阱InGaAsP有源区实现的，该有源区先前用于制造高速直接调制DFB激光器，从而实现它们的共集成。
