ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5554-5560. doi: 10.1021/acsami.8b19989. Epub 2019 Jan 29.
We characterize and discuss the impact of hydrogenation on the performance of phosphorus-doped polycrystalline silicon (poly-Si) films for passivating contact solar cells. Combining various characterization techniques including transmission electron microscopy, energy-dispersive X-ray spectroscopy, low-temperature photoluminescence spectroscopy, quasi-steady-state photoconductance, and Fourier-transform infrared spectroscopy, we demonstrate that the hydrogen content inside the doped poly-Si layers can be manipulated to improve the quality of the passivating contact structures. After the hydrogenation process of poly-Si layers fabricated under different conditions, the effective lifetime and the implied open circuit voltage are improved for all investigated samples (up to 4.75 ms and 728 mV on 1 Ω cm n-type Si substrates). Notably, samples with very low initial passivation qualities show a dramatic improvement from 350 μs to 2.7 ms and from 668 to 722 mV.
我们对磷掺杂多晶硅（poly-Si）薄膜的氢化性能及其对钝化接触太阳能电池的影响进行了研究和讨论。通过结合透射电子显微镜、能量色散 X 射线光谱、低温光致发光光谱、准稳态光电导和傅里叶变换红外光谱等多种表征技术，我们证明可以通过调控掺杂 poly-Si 层中的氢含量来改善钝化接触结构的质量。对在不同条件下制备的 poly-Si 层进行氢化处理后，所有被研究的样品的有效寿命和内建开路电压都得到了提高（在 1 Ω cm 的 n 型 Si 衬底上分别高达 4.75 ms 和 728 mV）。值得注意的是，初始钝化质量非常低的样品的有效寿命从 350 μs 提高到 2.7 ms，内建开路电压从 668 mV 提高到 722 mV。
