Hoa Nguyen Thi Quynh, Tuan Tran Sy, Hieu Lam Trung, Giang Bach Long
School of Engineering and Technology, Vinh University, 182 Le Duan, Vinh City, Vietnam.
NTT Hi-Tech Institute, Nguyen Tat Thanh University, Ho Chi Minh City, Vietnam.
Sci Rep. 2019 Jan 24;9(1):468. doi: 10.1038/s41598-018-36453-6.
We report a facile design of an ultra-thin broadband metamaterial absorber (MA) for C-band applications by utilizing a single layer of a metal-dielectric-metal structure of FR-4 substrate. The absorption performances are characterized using a numerical method. The proposed MA exhibits the broadband absorption response over the entire C-band spectrum range from 4.0 GHz to 8.0 GHz with absorptivity above 90% and the high absorptivity is remained over 80% for a large incident angle up to 40° under both transverse electric (TE) and transverse magnetic (TM) polarizations over the band. The origin of absorption mechanism is explained by the electric and surface current distributions, which is also supported by the retrieved constitutive electromagnetic parameters, significantly affected by magnetic resonance. In addition, compared with the previous reports, the proposed MA presents a greater practical feasibility in term of low-profile and wide incident angle insensitivity, suggesting that the proposed absorber is a promising candidate for C-band applications.
我们报告了一种通过利用单层FR-4基板的金属-电介质-金属结构,为C波段应用设计的超薄宽带超材料吸收器(MA)的简便方法。使用数值方法对吸收性能进行了表征。所提出的MA在4.0 GHz至8.0 GHz的整个C波段频谱范围内表现出宽带吸收响应,吸收率高于90%,并且在该频段的横向电(TE)和横向磁(TM)极化下,对于高达40°的大入射角,高吸收率保持在80%以上。通过电流和表面电流分布解释了吸收机制的起源,这也得到了反演的本构电磁参数的支持,这些参数受磁共振的显著影响。此外,与先前的报道相比,所提出的MA在低剖面和宽入射角不敏感性方面具有更大的实际可行性,这表明所提出的吸收器是C波段应用的一个有前途的候选者。