Borodin V A, Vladimirov P V
NRC Kurchatov Institute, Kurchatov Sq. 1, 123182 Moscow, Russia. National Research Nuclear University MEPhI, Kashirskoe Sh. 31, 115409 Moscow, Russia.
J Phys Condens Matter. 2019 May 8;31(18):185401. doi: 10.1088/1361-648X/ab0255. Epub 2019 Jan 28.
The paper deals with the first principles simulation of formation energies and migration barriers of self point defects, including vacancies, di-vacancies and single interstitial atoms, in metallic yttrium. The vacancy formation energy in yttrium is shown to be relatively high (~1.8 eV), whereas the migration barriers are very similar for the jumps inside the basal planes and between basal planes, being equal to ~0.65 eV. The sum of these numbers reasonably reproduces the experimental values of the self-diffusion activation barriers. The vacancy pairs at the first nearest neighbor separation (divacancies) have binding energy of ~0.2 eV, which is only weakly sensitive to the divacancy orientation in the lattice, whereas vacancy pairs at the second and third nearest-neighbor separations are energetically unfavorable, suppressing the dissociation of divacancies. Together with the noticeably lower divacancy migration barriers with respect to single vacancies, this makes divacancies efficient mediators for mass transfer in Y. Among multiple possible configurations of a single interstitial, only the basal octahedral one is found to be the true energy minimum, while all the other considered possibilities are either unstable, or saddle points on the potential energy surface. This is in contrast to other hcp metals, where several metastable interstitial configurations often coexist. The lowest migration barriers for single interstitial diffusion along the basal plane and between planes are practically equal, ~0.4 eV, implying isotropic diffusion of interstitials in yttrium. Overall, the predicted properties of point defects in yttrium are in line with the general trends for hcp metals with the c/a ratio below [Formula: see text].
本文研究了金属钇中自点缺陷(包括空位、双空位和单个间隙原子)的形成能和迁移势垒的第一性原理模拟。结果表明,钇中的空位形成能相对较高(约1.8 eV),而基面内跳跃和基面间跳跃的迁移势垒非常相似,均约为0.65 eV。这些数值之和合理地再现了自扩散激活势垒的实验值。最近邻间距处的空位对(双空位)结合能约为0.2 eV,对晶格中双空位的取向仅具有微弱的敏感性,而次近邻和第三近邻间距处的空位对在能量上是不利的,抑制了双空位的解离。再加上双空位相对于单个空位明显更低的迁移势垒,这使得双空位成为钇中质量传输的有效介质。在单个间隙原子的多种可能构型中,仅发现基面八面体构型是真正的能量最小值,而所有其他考虑的可能性要么不稳定,要么是势能面上的鞍点。这与其他六方密堆积金属不同,在其他六方密堆积金属中,几种亚稳间隙构型常常共存。单个间隙原子沿基面和基面间扩散的最低迁移势垒实际上相等,约为0.4 eV,这意味着钇中间隙原子的扩散是各向同性的。总体而言,钇中点缺陷的预测性质与c/a比低于[公式:见原文]的六方密堆积金属的一般趋势一致。