ACS Appl Mater Interfaces. 2019 Feb 27;11(8):8545-8555. doi: 10.1021/acsami.8b21416. Epub 2019 Feb 13.
Mixed networks of conducting and nonconducting nanoparticles show promise in a range of applications where fast charge transport is important. While the dependence of network conductivity on the loading level of conductive additive is well understood, little is known about the loading dependence of mobility and carrier density. This is particularly important as the addition of graphene might lead to increases in the mobility of semiconducting nanosheet network transistors. Here, we use electrolytic gating to investigate the transport properties of spray-coated composite networks of graphene and WS nanosheets. As the graphene loading is increased, we find that both conductivity and carrier density increase in line with the percolation theory with percolation thresholds (∼8 vol %) and exponents (∼2.5) consistent with previous reporting. Perhaps surprisingly, we find the mobility increases modestly from ∼0.1 cm/V s (for a WS network) to ∼0.3 cm/V s (for a graphene network) which we attribute to the similarity between WS-WS and graphene-graphene junction resistances. In addition, we find both the transistor on- and off-currents to scale with loading according to the percolation theory, changing sharply at the percolation threshold. Through fitting, we show that only the current in the WS network changes significantly upon gating. As a result, the on-off ratio falls sharply at the percolation threshold from ∼10 to ∼2 at higher loading. Reflecting on these results, we conclude that the addition of graphene to a semiconducting network is not a viable strategy to improve transistor performance as it reduces the on:off ratio far more than it improves the mobility.
在需要快速电荷传输的各种应用中,导电和非导电纳米粒子的混合网络具有广阔的应用前景。虽然网络电导率对导电添加剂负载水平的依赖性已得到很好的理解,但对迁移率和载流子密度的负载依赖性知之甚少。这一点尤为重要,因为添加石墨烯可能会导致半导体纳米片网络晶体管的迁移率提高。在这里,我们使用电解门控来研究喷涂复合网络中石墨烯和 WS 纳米片的传输特性。随着石墨烯负载的增加,我们发现电导率和载流子密度都与渗流理论一致地增加,渗流阈值(约 8%体积)和指数(约 2.5)与之前的报道一致。也许令人惊讶的是,我们发现迁移率从约 0.1cm/Vs(对于 WS 网络)适度增加到约 0.3cm/Vs(对于石墨烯网络),我们将其归因于 WS-WS 和石墨烯-石墨烯结电阻之间的相似性。此外,我们发现晶体管的导通和截止电流都根据渗流理论随负载而变化,在渗流阈值处急剧变化。通过拟合,我们表明只有在 WS 网络中的电流在门控时发生显著变化。结果,在更高的负载下,导通-关断比在渗流阈值处从约 10 急剧下降到约 2。考虑到这些结果,我们得出结论,将石墨烯添加到半导体网络中并不是提高晶体管性能的可行策略,因为它降低了导通-关断比的幅度远大于提高迁移率的幅度。