Department of Chemistry, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, USA.
Department of Chemistry, Texas Christian University, Fort Worth, Texas 76129, USA.
J Chem Phys. 2019 Jan 28;150(4):041727. doi: 10.1063/1.5048780.
A mesoporous atomic layer deposition (ALD) double-shell electrode, AlO (insulating core)//ALD ZnO|ALD TiO, on a fluorine-doped tin oxide (FTO) conducting substrate was explored for a photoanode assembly, FTO//AlO (insulating core)//ALD ZnO|ALD TiO|-chromophore-catalyst, for light-driven water oxidation. Photocurrent densities at photoanodes based on mesoporous ALD double-shell (ALD ZnO|ALD TiO|) and ALD single-shell (ALD ZnO|, ALD TiO|) electrodes were investigated for O evaluation by a generator-collector dual working electrode configuration. The high photocurrent densities obtained based on the mesoporous ALD ZnO|ALD TiO photoanode for O evolution arise from a significant barrier to back electron transfer (BET) by the optimized tunneling barrier in the structure with the built-in electric field at the ALD ZnO|ALD TiO interface. The charge recombination is thus largely decreased. In the films, BET following injection has been investigated through kinetic nanosecond transient absorption spectra, and the results of energy band analysis are used to derive insight into the internal electronic structure of the electrodes.
介孔原子层沉积(ALD)双层壳电极 AlO(绝缘核)//ALD ZnO|ALD TiO,在掺氟氧化锡(FTO)导电基底上,探索用于光阳极组件,FTO//AlO(绝缘核)//ALD ZnO|ALD TiO-生色团-催化剂,用于光驱动水氧化。通过发生器-收集器双工作电极构型,研究了基于介孔 ALD 双层壳(ALD ZnO|ALD TiO|)和 ALD 单层壳(ALD ZnO|,ALD TiO|)电极的光阳极的光电流密度,以评估 O。基于介孔 ALD ZnO|ALD TiO 光阳极的高光电流密度源于优化的隧道势垒在结构中产生的对反向电子转移(BET)的显著势垒,以及在 ALD ZnO|ALD TiO 界面处的内置电场。因此,电荷复合大大减少。在薄膜中,通过动力学纳秒瞬态吸收光谱研究了 BET 后注入,并且能带分析的结果用于深入了解电极的内部电子结构。