Laboratory for Materials and Structures , Tokyo Institute of Technology , 4259 Nagatsuta , Midori-ku , Yokohama 226-8503 , Japan.
Institute of Multidisciplinary Research for Advanced Materials , Tohoku University , 2-1-1 Katahira , Aoba-ku , Sendai 980-8577 , Japan.
Inorg Chem. 2019 Feb 18;58(4):2755-2760. doi: 10.1021/acs.inorgchem.8b03333. Epub 2019 Feb 6.
The crystal structure and stability of a giant tetragonal phase in electron-doped PbBi VO ( x = 0.1, 0.2, and 0.3) and hole-doped PbNa VO ( x = 0.1, 0.2, and 0.3) were studied. Electron doping effectively destabilized the tetragonal structure. The c/ a ratio, spontaneous polarization, and tetragonal-to-cubic phase transition pressure systematically decreased with increasing Bi substitution. In contrast, hole doping hardly affected the tetragonal distortion and structural stability. We showed that electron doping is an effective way to control the stability of the tetragonal phase of PbVO with a 3d electronic configuration.
研究了电子掺杂的 PbBiVO（x=0.1、0.2 和 0.3）和空穴掺杂的 PbNaVO（x=0.1、0.2 和 0.3）中巨型四方相的晶体结构和稳定性。电子掺杂有效地破坏了四方结构。c/a 比、自发极化和四方-立方相转变压力随 Bi 取代量的增加而系统地降低。相比之下，空穴掺杂几乎不影响四方畸变和结构稳定性。我们表明，电子掺杂是控制具有 3d 电子构型的 PbVO 四方相稳定性的有效方法。
