Zhu Yeyu, Zhu Lin
Opt Express. 2019 Feb 4;27(3):2354-2362. doi: 10.1364/OE.27.002354.
We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs-SiN platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics.
我们展示了在InP/GaAs-SiN平台中混合集成的窄线宽、可调谐二极管激光器。选用氮化硅光子集成电路，而非在1μm附近存在高光损耗的硅波导，来同时为InP和GaAs增益芯片构建一个可调谐外腔。在单个芯片上同时实现了1.55μm和1μm的单频激光发射，其光谱线宽分别为18kHz和70kHz，边模抑制比分别为52dB和46dB，调谐范围分别为46nm和38nm。由此产生的双波段窄线宽二极管激光器具有用于多种新颖应用的潜力，如集成差频产生、量子光子学和非线性光学。
