Canedy Chadwick L, Bewley William W, Merritt Charles D, Kim Chul Soo, Kim Mijin, Warren Michael V, Jackson Eric M, Nolde Jill A, Affouda C A, Aifer Edward H, Vurgaftman Igor, Meyer Jerry R
Opt Express. 2019 Feb 4;27(3):3771-3781. doi: 10.1364/OE.27.003771.
We report resonant-cavity infrared detectors with 34% external quantum efficiency at room temperature at the resonant wavelength of 4.0 μm, even though the absorber consists of only five quantum wells with a total thickness of 50 nm. The full width at half maximum (FWHM) linewidth is 46 nm, and the peak absorption is enhanced by nearly a factor of 30 over that for a single pass through the absorber. In spite of an unfavorable Shockley-Read lifetime in the current material, the dark current density is at the level of state-of-the-art HgCdTe detectors as quantified by "Rule 07." The Johnson-noise limited detectivity (D*) at 21°C is 7 × 10 cm Hz/W. We expect that future improvements in the device design and material quality will lead to higher quantum efficiency, as well as a significant reduction of the dark current density consistent with the very thin absorber.
我们报道了一种共振腔红外探测器，在室温下，于4.0μm的共振波长处具有34%的外量子效率，尽管吸收体仅由五个总厚度为50nm的量子阱组成。半高宽（FWHM）线宽为46nm，与单次穿过吸收体相比，峰值吸收增强了近30倍。尽管当前材料中的肖克利-里德寿命不理想，但根据“规则07”量化，暗电流密度处于现有技术水平的HgCdTe探测器的水平。在21°C时，约翰逊噪声限制探测率（D*）为7×10 cm Hz/W。我们预计，未来器件设计和材料质量的改进将带来更高的量子效率，以及与非常薄的吸收体相一致的暗电流密度的显著降低。
