Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.
Russian Quantum Center, Moscow, Russia, 143025.
Nat Commun. 2019 Feb 8;10(1):680. doi: 10.1038/s41467-019-08498-2.
Microcombs provide a path to broad-bandwidth integrated frequency combs with low power consumption, which are compatible with wafer-scale fabrication. Yet, electrically-driven, photonic chip-based microcombs are inhibited by the required high threshold power and the frequency agility of the laser for soliton initiation. Here we demonstrate an electrically-driven soliton microcomb by coupling a III-V-material-based (indium phosphide) multiple-longitudinal-mode laser diode chip to a high-Q silicon nitride microresonator fabricated using the photonic Damascene process. The laser diode is self-injection locked to the microresonator, which is accompanied by the narrowing of the laser linewidth, and the simultaneous formation of dissipative Kerr solitons. By tuning the laser diode current, we observe transitions from modulation instability, breather solitons, to single-soliton states. The system operating at an electronically-detectable sub-100-GHz mode spacing requires less than 1 Watt of electrical power, can fit in a volume of ca. 1 cm, and does not require on-chip filters and heaters, thus simplifying the integrated microcomb.
微梳提供了一种具有低功耗、与晶圆级制造兼容的宽带集成频率梳的途径。然而,基于电光芯片的微梳受到所需的高阈值功率和用于孤子产生的激光的频率敏捷性的限制。在这里,我们通过将基于 III-V 材料(磷化铟)的多纵模激光二极管芯片耦合到使用光子大马士革工艺制造的高 Q 值氮化硅微谐振器,展示了一种电驱动的孤子微梳。激光二极管被自注入锁定到微谐振器,这伴随着激光线宽变窄,以及耗散克尔孤子的同时形成。通过调节激光二极管电流,我们观察到从调制不稳定性、呼吸子孤子到单孤子状态的转变。该系统以电子可检测的低于 100GHz 的模式间隔运行,所需的电功率小于 1 瓦,可以装入约 1 立方厘米的体积内,并且不需要片上滤波器和加热器,从而简化了集成微梳。