Plasmon-Induced Heterointerface Thinning for Schottky Barrier Modification of Core/Shell SiC/SiO Nanowires.

In this work, plasmon-induced heterointerface thinning for Schottky barrier modification of core/shell SiC/SiO nanowires is conducted by femtosecond (fs) laser irradiation. The incident energy of polarized fs laser (50 fs, 800 nm) is confined in the SiO shell of the nanowire due to strong plasmonic localization in the region of the electrode-nanowire junction. With intense nonlinear absorption in SiO, the thickness of the SiO layer can be thinned in a controllable way. The tuning of the SiO barrier layer allows the promotion of electron transportation at the electrode-nanowire interface. The switching voltage of the rectifying junction made by the SiC/SiO nanowire can be significantly tuned from 15.7 to 1 V. When selectively thinning at source and drain electrodes and leaving the SiO barrier layer at the gate electrode intact, a metal/oxide/semiconductor (MOS) device is fabricated with low leakage current. This optically controlled interfacial engineering technology should be applicable for MOS components and other heterogeneous integration structures.