Nedeljkovic M, Littlejohns C G, Khokhar A Z, Banakar M, Cao W, Penades J Soler, Tran D T, Gardes F Y, Thomson D J, Reed G T, Wang H, Mashanovich G Z
Opt Lett. 2019 Feb 15;44(4):915-918. doi: 10.1364/OL.44.000915.
Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a VL of 0.052 V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.
本文展示了基于绝缘体上硅波导的自由载流子效应调制器在3.8μm波长下的实验演示。PIN二极管用于将载流子注入波导，并配置为：(a)利用自由载流子电吸收创建具有34dB调制深度的可变光衰减器；(b)在马赫-曾德尔干涉仪中，将PIN二极管用作移相器，利用自由载流子电折射，实现了0.052V·mm的电压长度积和22dB的直流调制深度。在高达125Mbit/s的数据速率下演示了调制。
