硅锗合金场辅助烧结的模拟

Simulation of Field Assisted Sintering of Silicon Germanium Alloys.

作者信息

Tukmakova Anastasiia, Novotelnova Anna, Samusevich Kseniia, Usenko Andrey, Moskovskikh Dmitriy, Smirnov Alexandr, Mirofyanchenko Ekaterina, Takagi Toshiyuki, Miki Hiroyuki, Khovaylo Vladimir

机构信息

Faculty of Cryogenic Engineering, ITMO University, St. Petersburg 197101, Russia.

Department of Functional Nanosystems and High Temperature Materials, National University of Science and Technology "MISiS", Moscow 119049, Russia.

出版信息

Materials (Basel). 2019 Feb 14;12(4):570. doi: 10.3390/ma12040570.

DOI:10.3390/ma12040570

PMID:30769820

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6416796/

Abstract

We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the experimental data collected from spark plasma sintering (SPS) apparatus. The thermoelectric properties of Si-Ge used within the simulation were considered as the function of density and the sintering temperature. Quantitative estimation of the temperature distribution during the sintering pointed to a significant, up to 60 °C, temperature difference within the specimen volume for the case of the sintering temperature at 1150 °C.

摘要

我们通过有限元方法对硅锗合金的场辅助烧结进行了数值研究，该方法考虑了接触电阻、热膨胀和热电效应。基于从放电等离子烧结（SPS）设备收集的实验数据，对电场和热场分布进行了数值分析。模拟中使用的Si-Ge热电性能被视为密度和烧结温度的函数。烧结过程中温度分布的定量估计表明，在烧结温度为1150°C的情况下，样品体积内存在高达60°C的显著温差。