Qu Jiangtao, Chen Hansheng, Khan Mansoor, Yun Fan, Cui Xiangyuan, Ringer Simon P, Cairney Julie M, Zheng Rongkun
School of Physics,Camperdown, New South Wales,Australia.
Aerospace, Mechanical and Mechatronic Engineering, the University of Sydney,2006 NSW,Australia.
Microsc Microanal. 2019 Apr;25(2):524-531. doi: 10.1017/S1431927619000114. Epub 2019 Feb 18.
Covering a broad optical spectrum, ternary InxGa1-xAs nanowires, grown by bottom-up methods, have been receiving increasing attention due to the tunability of the bandgap via In composition modulation. However, inadequate knowledge about the correlation between growth and properties restricts our ability to take advantage of this phenomenon for optoelectronic applications. Here, three different InGaAs nanowires were grown under different experimental conditions and atom probe tomography was used to quantify their composition, allowing the direct observation of the nanowire composition associated with the different growth conditions.
通过自下而上的方法生长的三元InxGa1-xAs纳米线覆盖了宽广的光谱范围，由于通过铟成分调制实现了带隙的可调性，它们受到了越来越多的关注。然而，对于生长与性能之间的相关性了解不足，限制了我们利用这一现象用于光电子应用的能力。在此，在不同的实验条件下生长了三种不同的InGaAs纳米线，并使用原子探针断层扫描技术对其成分进行量化，从而能够直接观察与不同生长条件相关的纳米线成分。
