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电化学法测定 II-VI 族半导体量子点能带结构参数的综合评述:教程回顾。

A consolidated account of electrochemical determination of band structure parameters in II-VI semiconductor quantum dots: a tutorial review.

机构信息

Department of Chemistry, IIT Delhi, New Delhi 110016, India.

出版信息

Phys Chem Chem Phys. 2019 Feb 27;21(9):4695-4716. doi: 10.1039/c8cp06847j.

Abstract

Probing absolute electronic energy levels in semiconductor quantum dots (Q-dots) is crucial for engineering their electronic band structure and hence for precise design of composite nano-structure based devices. The use of electrochemistry has allowed us to investigate size, shape and composition dependent band structure parameters viz. the conduction band edge, valence band edge & quasi-particle gap and to establish novel charge induced phenomena in colloidal semiconductor Q-dots. The electrochemical behavior is also of special importance for the prediction of the stability of Q-dots in biological environments as well as for precise design of composite nanohetero-structures for opto-electronic (light emitting diodes) and photovoltaic (solar cells) applications. Several researchers have contributed to probing and predicting the positions of absolute energy levels of band edges and surface states as well as to the establishment of a potential window of stability for a wide variety of Q-dots both in aqueous media and in organic solution. The crucial point about these studies is that unlike spectroscopic methods, no unified approach has been followed and a variety of methods and protocols have been developed to carry out these measurements either on diffusing or thin films of Q-dots in different electrolyte media viz. aqueous, organic and ionic liquids, each having their own advantages over the others. However, a consolidated account of these methods and protocols is not available in the literature. The aim of this tutorial review is therefore to consolidate and compare the studies related to the determination of the band structure of II-VI semiconductor Q-dots through electrochemical measurements. A brief introduction to electrochemical techniques, especially cyclic voltammetry, is given, followed by a summary of experimental methods developed for these measurements. Finally, a concise protocol that can be easily applied universally and is attractive for other users dealing with semiconductor Q-dot based devices is discussed.

摘要

探究半导体量子点 (Q-dot) 的绝对电子能级对于工程学设计其电子能带结构至关重要,从而可以精确设计基于纳米结构的复合器件。电化学的应用使我们能够研究尺寸、形状和组成依赖性的能带结构参数,例如导带边缘、价带边缘和准粒子能隙,并在胶体半导体 Q-dot 中建立新的电荷诱导现象。电化学行为对于预测 Q-dot 在生物环境中的稳定性以及精确设计用于光电(发光二极管)和光伏(太阳能电池)应用的复合纳米异质结构也非常重要。许多研究人员致力于探究和预测能带边缘和表面态的绝对能级位置,以及在水介质和有机溶剂中为各种 Q-dot 建立稳定的电势窗口。这些研究的关键在于,与光谱方法不同,没有遵循统一的方法,而是开发了各种方法和协议来进行这些测量,无论是在扩散或 Q-dot 的薄膜中,还是在不同的电解质介质中,如水溶液、有机溶剂和离子液体,每种介质都有其相对于其他介质的优势。然而,这些方法和协议的综合说明在文献中并不存在。本教程综述的目的因此是整合和比较通过电化学测量来确定 II-VI 半导体 Q-dot 能带结构的研究。本文简要介绍了电化学技术,特别是循环伏安法,然后总结了为这些测量开发的实验方法。最后,讨论了一个简洁的协议,该协议可以轻松地普遍应用,并且对处理基于半导体 Q-dot 的器件的其他用户具有吸引力。

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