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3D 有序介孔 TiO@CMK-3 纳米结构用于钠离子电池,具有长期和高倍率性能。

3D ordered mesoporous TiO@CMK-3 nanostructure for sodium-ion batteries with long-term and high-rate performance.

机构信息

Department of Applied Chemistry, School of Science, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.

出版信息

Nanotechnology. 2019 Jun 7;30(23):235401. doi: 10.1088/1361-6528/ab0812. Epub 2019 Feb 18.

DOI:10.1088/1361-6528/ab0812
PMID:30776784
Abstract

Sodium ion battery is abundant in resources and costs low, making it very competitive in the large-scale energy storage devices. The anatase TiO electrode material with insertion/extraction mechanism shows stable cycling performance, which is more in line with the technical requirements of large-scale energy storage batteries. To improve the electrical conductivity and stability of the TiO electrode materials, we have synthesized anatase TiO and CMK-3 composite. TiO nanoparticles were deposited on the surface of CMK-3 by hydrothermal reaction, and the anode material of the SIBs with 3D network structure was prepared. With the CMK-3, the structure stability, conductivity and reaction kinetics of TiO@CMK-3 composite is improved. The electrochemical behavior is dominated by pseudocapacitance, which gives the material excellent high-rate performance. It delivers a reversible specific capacity of 186.3 mA h g after 100 cycles at the current density of 50 mA g, 124.5 mA h g after 500 long-term cycles, meanwhile it shows an outstanding rate performance, a reversible specific capacity of 105.9 mA h g at 1600 mA g, 177.3 mA h g when the current density drops to 50 mA g.

摘要

钠离子电池资源丰富、成本低廉,在大规模储能装置中极具竞争力。具有插层/脱层机制的锐钛矿 TiO 电极材料具有稳定的循环性能,更符合大规模储能电池的技术要求。为了提高 TiO 电极材料的导电性和稳定性,我们合成了锐钛矿 TiO 和 CMK-3 的复合材料。TiO 纳米粒子通过水热反应沉积在 CMK-3 的表面,制备了具有 3D 网络结构的 SIBs 阳极材料。CMK-3 提高了 TiO@CMK-3 复合材料的结构稳定性、导电性和反应动力学。电化学行为以赝电容为主,使材料具有优异的高倍率性能。在 50 mA g 的电流密度下,经过 100 次循环后,可逆比容量为 186.3 mA h g-1,经过 500 次长期循环后,可逆比容量为 124.5 mA h g-1,同时表现出优异的倍率性能,在 1600 mA g-1 的电流密度下,可逆比容量为 105.9 mA h g-1,当电流密度降低到 50 mA g-1 时,可逆比容量为 177.3 mA h g-1。

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