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用于大电流互连线应用的 SWCNT 薄膜上的多层石墨烯纳带。

Multilayer graphene nanobelts on SWCNT films for high current interconnect applications.

机构信息

Department of Physics, Kaunas University of Technology, Studentu St. 50, LT-51368, Kaunas, Lithuania. Institute of Materials Science, Kaunas University of Technology, K. Barsausko St. 59, LT-51423, Kaunas, Lithuania.

出版信息

Nanotechnology. 2019 Jun 14;30(24):245203. doi: 10.1088/1361-6528/ab083f. Epub 2019 Feb 19.

Abstract

In this work we propose multilayer graphene (MLG) nanobelts for high current interconnections with single wall carbon nanotubes (SWCNT) and compare these with metal contacts. MLG contacts were directly printed on the SWCNT, without any additional metal parts, demonstrating the possibility to use these materials as interconnections in microelectronics. Different work function metals Al, Ti and Pd were probed for the lowest contact resistance with the SWCNT. Ti contacts demonstrated the best results among the metals owing to its work function being closest to the SWCNT and therefore giving the lowest Schottky barrier. Even though Ti contacts show the lowest contact resistance, the current density for MLG contacts was higher, giving the best results for high current interconnection applications. Moreover, MLG contacts show a stable and repeatable resistance decrease under high current conditions. Heat treatment of the MLG and metal contacts was completed in vacuum, in order to further reduce the contact resistance and optimal heat treatment conditions were found at 600 °C.

摘要

在这项工作中,我们提出了多层石墨烯 (MLG) 纳米带,用于与单壁碳纳米管 (SWCNT) 的高电流互连,并将其与金属接触进行了比较。MLG 接触是直接打印在 SWCNT 上的,没有任何额外的金属部件,这证明了这些材料有可能用作微电子学中的互连。我们研究了不同功函数的金属 Al、Ti 和 Pd,以找到与 SWCNT 接触电阻最低的金属。Ti 接触由于其功函数最接近 SWCNT,因此形成的肖特基势垒最低,在这些金属中表现出最好的结果。尽管 Ti 接触显示出最低的接触电阻,但 MLG 接触的电流密度更高,因此在高电流互连应用中表现最佳。此外,MLG 接触在高电流条件下显示出稳定且可重复的电阻降低。MLG 和金属接触的热处理是在真空中完成的,以进一步降低接触电阻,并找到了在 600°C 时的最佳热处理条件。

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