自供电、宽带、超快 InGaN 基光电探测器。

Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector.

机构信息

Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.

Central Research Laboratory , Bharat Electronics , Bangalore 560013 , India.

出版信息

ACS Appl Mater Interfaces. 2019 Mar 13;11(10):10418-10425. doi: 10.1021/acsami.8b22569. Epub 2019 Mar 4.

DOI:10.1021/acsami.8b22569

PMID:30786709

Abstract

A self-powered, broad band and ultrafast photodetector based on n-InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type Si(111) substrate. The n-InGaN/AlN/n-Si(111) devices exhibit excellent self-powered photoresponse under UV-visible (300-800 nm) light illumination. The maximum response of this self-powered photodetector is observed at 580 nm for low-intensity irradiance (0.1 mW/cm), owing to the deep donor states present near the InGaN/AlN interface. It shows a responsivity of 9.64 A/W with rise and fall times of 19.9 and 21.4 μs, respectively. A relation between the open circuit voltage and the responsivity has been realized.

摘要

本文展示了一种基于 n-InGaN/AlN/n-Si(111) 异质结构的自供电、宽频带和超快光电探测器。通过等离子体辅助分子束外延在 n 型 Si(111) 衬底上的 100nm 厚 AlN 模板上生长 Si 掺杂（n 型）InGaN 外延层。n-InGaN/AlN/n-Si(111) 器件在紫外可见（300-800nm）光照射下表现出优异的自供电光响应。由于在 InGaN/AlN 界面附近存在深施主态，这种自供电光电探测器在低强度辐照度（0.1mW/cm）下的最大响应在 580nm 处。它的响应率为 9.64A/W，上升和下降时间分别为 19.9 和 21.4μs。已经实现了开路电压与响应率之间的关系。